Below band-gap optical absorption in semiconductor alloys
Identifieur interne : 011E75 ( Main/Repository ); précédent : 011E74; suivant : 011E76Below band-gap optical absorption in semiconductor alloys
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Abstract
We have used accurate Hamiltonians and resulting wave functions to calculate the two-photon absorption coefficient and the free-carrier absorption coefficient in InAs and a HgCdTe alloy with the same band gap. Detailed results are obtained for the dependencies of the absorption on photon energy and incident intensity. Optical matrix elements are calculated from the wave number dependent wave functions. We have further solved the appropriate steady-state differential equation, with the calculated values of absorption coefficients, for depth dependence of the intensity in the material. We find that the nonlinear absorption in a HgCdTe alloy is about 100% larger than that in InAs of the same band gap and window thickness. © 2000 American Institute of Physics.
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Sher</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SRI International, Menlo Park, California 94025</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>SRI International, Menlo Park</wicri:cityArea></affiliation></author><author><name sortKey="Chen, A B" uniqKey="Chen A">A.-B. Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SRI International, Menlo Park, California 94025</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>SRI International, Menlo Park</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0290724</idno><date when="2000-07-01">2000-07-01</date><idno type="stanalyst">PASCAL 00-0290724 AIP</idno><idno type="RBID">Pascal:00-0290724</idno><idno type="wicri:Area/Main/Corpus">012D93</idno><idno type="wicri:Area/Main/Repository">011E75</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Cadmium compounds</term><term>II-VI semiconductors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Mercury compounds</term><term>Nonlinear optics</term><term>Theoretical study</term><term>Two-photon spectra</term><term>Wave functions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7820C</term><term>4265</term><term>Etude théorique</term><term>Fonction onde</term><term>Coefficient absorption</term><term>Spectre 2 photons</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Mercure composé</term><term>Cadmium composé</term><term>Semiconducteur II-VI</term><term>Optique non linéaire</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have used accurate Hamiltonians and resulting wave functions to calculate the two-photon absorption coefficient and the free-carrier absorption coefficient in InAs and a HgCdTe alloy with the same band gap. Detailed results are obtained for the dependencies of the absorption on photon energy and incident intensity. Optical matrix elements are calculated from the wave number dependent wave functions. We have further solved the appropriate steady-state differential equation, with the calculated values of absorption coefficients, for depth dependence of the intensity in the material. We find that the nonlinear absorption in a HgCdTe alloy is about 100% larger than that in InAs of the same band gap and window thickness. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>88</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Below band-gap optical absorption in semiconductor alloys</s1></fA08><fA11 i1="01" i2="1"><s1>KRISHNAMURTHY (Srinivasan)</s1></fA11><fA11 i1="02" i2="1"><s1>SHER (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHEN (A.-B.)</s1></fA11><fA14 i1="01"><s1>SRI International, Menlo Park, California 94025</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Physics Department, Auburn University, Auburn, Alabama 36349</s1></fA14><fA20><s1>260-264</s1></fA20><fA21><s1>2000-07-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0290724</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have used accurate Hamiltonians and resulting wave functions to calculate the two-photon absorption coefficient and the free-carrier absorption coefficient in InAs and a HgCdTe alloy with the same band gap. Detailed results are obtained for the dependencies of the absorption on photon energy and incident intensity. Optical matrix elements are calculated from the wave number dependent wave functions. We have further solved the appropriate steady-state differential equation, with the calculated values of absorption coefficients, for depth dependence of the intensity in the material. 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